1/6 stps20150ct/cg/cr/cfp ? december 2002 - ed: 5d high voltage power schottky rectifier i f(av) 2x10a v rrm 150 v t j 175c v f (max) 0.75 v main product characteristics n high junction temperature capability n good trade off between leakage cur- rent and forward voltage drop n low leakage current features and benefits dual center tap schottky rectifier designed for high frequency switched mode power sup- plies. description to-220fpab STPS20150CFP a1 k a2 symbol parameter value unit v rrm repetitive peak reverse voltage 150 v i f(rms) rms forward current 30 a i f(av) average forward current d = 0.5 to-220ab d 2 pak/i 2 pak tc = 155c per diode 10 a to-220fpab tc = 135c per device 20 i fsm surge non repetitive forward current tp = 10 ms sinusoidal 180 a t stg storage temperature range - 65 to + 175 c t j maximum operating junction temperature 175 c dv/dt critical rate of rise of reverse voltage 10000 v/ m s absolute ratings (limiting values, per diode) d 2 pak stps20150cg k a2 a1 a1 a2 k k k a1 a2 i 2 pak stps20150cr to-220ab stps20150ct a1 a2 k
stps20150ct/cg/cr/cfp 2/6 symbol parameter value unit r th(j-c) junction to case to-220ab / d 2 pak/i 2 pak per diode 2.2 c/w to-220fpab 4.5 to-220ab / d 2 pak/i 2 pak total 1.3 to-220fpab 3.5 r th(c) to-220ab / d 2 pak/i 2 pak coupling 0.3 to-220fpab 2.5 thermal resistances symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25c v r =v rrm 5.0 m a tj = 125c 5.0 ma v f ** forward voltage drop tj = 25 ci f = 10 a 0.92 v tj = 125c i f = 10 a 0.69 0.75 tj=25 ci f =20a 1 tj = 125c i f = 20 a 0.79 0.86 pulse test : * t p=5ms, d <2% ** tp = 380 m s, d <2% to evaluate the conduction losses use the following equation: p=0.64xi f(av) + 0.011 i f 2 (rms) static electrical characteristics (per diode) when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) 0123456789101112 0 1 2 3 4 5 6 7 8 9 10 i (a) f(av) p (w) f(av) t d =tp/t tp d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 fig. 1: average forward power dissipation versus average forward current (per diode). 0 1 2 3 4 5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175 t (c) amb i (a) f(av) t d =tp/t tp r =r (to-220ab, i pak and d pak) th(j-a) th(j-c) 22 r =r (to-220fpab) th(j-a) th(j-c) r =15c/w th(j-a) fig. 2: average forward current versus ambient temperature ( d = 0.5, per diode).
stps20150ct/cg/cr/cfp 3/6 0 25 50 75 100 125 150 1.e-03 1.e-02 1.e-01 1.e+00 t(s) i (a) m i m t d =0.5 to-220ab, i pak and d pak 22 t =50c c t =75c c t =125c c fig. 3-1: non repetitive surge peak forward cur- rent versus overload duration (maximum values, per diode). to-220ab, i2pak and d2pak 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 to-220ab, i pak and d pak 22 t (s) p z/r th(j-c) th(j-c) t d =tp/t tp d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4-1: relative variation of thermal impedance junction to case versus pulse duration. to-220ab, i2pak and d2pak 0 25 50 75 100 125 150 1e-1 1e+0 1e+1 1e+2 1e+3 1e+4 1e+5 i (ma) r v (v) r t =175c j t =150c j t =125c j t =100c j t =25c j fig. 5: reverse leakage current versus reverse voltage applied (typical values, per diode). 1 2 5 10 20 50 100 200 10 100 1000 c(nf) f=1mhz t =25c j v (v) r fig. 6: junction capacitance versus reverse voltage applied (typical values, per diode). 0 10 20 30 40 50 60 70 80 90 100 1.e-03 1.e-02 1.e-01 1.e+00 t(s) i (a) m i m t d =0.5 to-220fpab t =50c c t =75c c t =125c c fig. 3-2: non repetitive surge peak forward cur- rent versus overload duration (maximum values, per diode). to-220fpab 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 to-220fpab t (s) p z/r th(j-c) th(j-c) t d =tp/t tp d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4-2: relative variation of thermal impedance junction to case versus pulse duration. to-220fpab
stps20150ct/cg/cr/cfp 4/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1.0 10.0 100.0 i (a) fm v (v) fm t =125c (typical values) j t =25c j t =125c j fig. 7: forward voltage drop versus forward current (per diode). 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 s(cm2) r (c/w) th(j-a) fig. 8: thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board, cu = 35m) (stps20150cg only). package mechanical data d 2 pak a c2 d r 2.0 min. flat zone a2 v2 c a1 g l l3 l2 b b2 e ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.30 4.60 0.169 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.25 1.40 0.049 0.055 c 0.45 0.60 0.017 0.024 c2 1.21 1.36 0.047 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.28 0.393 0.405 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 r 0.40 0.016 v2 0 8 0 8 8.90 3.70 1.30 5.08 16.90 10.30 foot print dimensions (in millimeters)
stps20150ct/cg/cr/cfp 5/6 package mechanical data to-220ab m h2 l2 a c l4 f1(x2) d f2 f g l9 l6 l7 l5 g1 e dia optional ref. dimensions millimeters inches min. max. min. max. a 4.30 4.60 0.169 0.181 c 1.22 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.33 0.70 0.013 0.028 f 0.61 0.93 0.024 0.037 f1 1.14 1.70 0.045 0.067 f2 1.14 1.70 0.045 0.067 g 4.95 5.15 0.195 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.00 typ. 0.630 typ. l4 13.00 14.00 0.512 0.551 l5 2.65 2.95 0.104 0.116 l6 14.80 15.75 0.583 0.620 l7 6.20 6.60 0.244 0.260 l9 3.40 3.94 0.134 0.155 m 2.60 typ. 0.102 typ. dia. 3.75 3.89 0.148 0.153 package mechanical data i 2 pak ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 b2 1.14 1.17 0.044 0.046 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e 10.0 10.4 0.394 0.409 l 13.1 13.6 0.516 0.535 l1 3.48 3.78 0.137 0.149 l2 1.27 1.40 0.050 0.055 e d l l1 l2 b1 b b2 e a c2 a1 c
stps20150ct/cg/cr/cfp 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com ordering type marking package weight base qty delivery mode stps20150ct stps20150ct to-220ab 2.20 g 50 tube stps20150cg stps20150cg d 2 pak 1.48 g 50 tube stps20150cg-tr stps20150cg d 2 pak 1.48 g 1000 tape & reel stps20150cr stps20150cr i 2 pak 1.49 g 50 tube STPS20150CFP STPS20150CFP to-220fpab 2.0 g 50 tube n epoxy meets ul94,v0 other information package mechanical data to-220fpab h l3 l2 l4 l6 g g1 f f1 l5 d e l7 a b dia f2 ref. dimensions millimeters inches min. max. min. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.70 0.018 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.70 0.045 0.067 f2 1.15 1.70 0.045 0.067 g 4.95 5.20 0.195 0.205 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 typ. 0.63 typ. l3 28.6 30.6 1.126 1.205 l4 9.8 10.6 0.386 0.417 l5 2.9 3.6 0.114 0.142 l6 15.9 16.4 0.626 0.646 l7 9.00 9.30 0.354 0.366 dia. 3.00 3.20 0.118 0.126
|
